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what is the Diffusion constant(cm2/s) for eletrons when the mobility 400cm2/V-s and the thermal voltage 26mV?
11.4
10.4
12.4
13.4

What is the energy of a fermi level Ef of a semicoductor when Nc is equal to the Nv and Ec=2eV ,Ev=1eV of a semiconductor ?
1eV
2eV
1.5eV
2.5eV

What is the majority hole concenctration (cm^-3) of doped silicon when electron concentration is 1X10^6 cm^-3?
2X10^4
3X10^4
1.5X10^4
2.25X10^4

What is the difference between fermi energy level and valence band when the semiconductor is doped and the no of acceptor concentration is double the hole concentration ?
0.018eV
0.02eV
0.0133eV
0.14eV

An electron current may flow in a semicondutor even in absence of electric field if ____________________
there exist magnetic field
there exist gradient of electrons
Both 1 and 2 are true
None of the above

The probabiity that an electron in a metal occupies the fermi level at any temperature (>0K)
0
0.5
1
0.25

In an extrinsic semiconductor the hall coefficient Rh __________ with increase in temperature
decreases
remains same
increases
None of the above

Arrange the following in increasing order of energy gap Carbon, germanium, silicon
Carbon, germanium, silicon
germanium,Carbon, silicon
silicon germanium, carbon
germanium silicon carbon

Which of the following is the acceptor atom?
Cadmium
selenium
Tellurium
sodium

consider germanium sample at room temp in which Nd =5X10^13/cm3 and Na=0 assume ni=2.4X10^13/cm3 what is the concentration of electrons in per cm3?
7X10^13
5X10^13
6X10^13
8X10^13

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